منابع مشابه
Pattern Competition in the Photorefractive Semiconductors
We analytically study the photorefractive Gunn e'ect in n-GaAs subjected to two external laser beams which form a moving interference pattern (MIP) in the semiconductor. When the intensity of the spatially independent part of the MIP, denoted by I0, is small, the system has a periodic domain train (PDT), consistent with the results of linear stability analysis. When I0 is su2ciently large, the ...
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متن کاملNonlocal Photorefractive Screening from Hot Electron Velocity Saturation in Semiconductors.
Intervalley scattering of hot electrons during high-field transport in transverse-field photorefractive quantum wells induces a nonlocal optical response in which photoinduced changes in the refractive index are spatially shifted relative to the optical stimulus, providing an avenue for optical gain. We demonstrate that the onset of the photorefractive phase shift coincides with the onset of ve...
متن کاملPolarized interacting exciton gas in quantum wells and bulk semiconductors.
We develop a theory to calculate exciton binding energies of both two-and three-dimensional spin polarized exciton gases within a mean field approach. Our method allows the analysis of recent experiments showing the importance of the polarization and intensity of the excitation light on the exciton lumines-cence of GaAs quantum wells. We study the breaking of the spin degeneracy observed at hig...
متن کاملAxisymmetric pulse recycling and motion in bulk semiconductors.
The Kroemer model for the Gunn effect in a circular geometry (Corbino disks) has been numerically solved. The results have been interpreted by means of asymptotic calculations. Above a certain onset dc voltage bias, axisymmetric pulses of the electric field are periodically shed by an inner circular cathode. These pulses decay as they move towards the outer anode, which they may not reach. As a...
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ژورنال
عنوان ژورنال: MRS Bulletin
سال: 1994
ISSN: 0883-7694,1938-1425
DOI: 10.1557/s0883769400039671